کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5349851 | 1503652 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The work presents a physical model of trap-assisted tunneling that can quantitatively determine the effect of traps upon the total current through a GaN/AlGaN/GaN heterostructure. The model is based on expressing the occupation probability of the trapping centers by electrons in terms of thermal and tunneling exchange times. The occupation probabilities calculated in this way are then used to work out the generation-recombination rates occurring in the continuity equations. This allowed us to simulate I-V curves of the structure with disabled and enabled trap-assisted tunneling and to verify the sensitivity of the model to the effective phonon energy. Although the model is proposed and tested for a particular structure, it is more general and can be applied to other structures as well.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 312, 1 September 2014, Pages 68-73
Journal: Applied Surface Science - Volume 312, 1 September 2014, Pages 68-73
نویسندگان
Juraj Racko, Peter Benko, Ivan Hotový, Ladislav Harmatha, Miroslav MikoláÅ¡ek, Ralf Granzner, Mario Kittler, Frank Schwierz, Juraj Breza,