Probing local work function of electron emitting Si-nanofacets

Large area, Si-nanofacets are synthesized by obliquely incident low energy Ar+-ion-beam bombardment at room temperature (RT). The field emission properties of such nanofacets are studied based on current-voltage measurements and the Fowler-Nordheim equation. Low turn-on field with relatively high current density is obtained due to the shape and an overall rough morphology. We demonstrate a tunable field emission property from the silicon nanofacets by varying the ion exposure time. Atomic force microscopy (AFM) in conjunction with Kelvin probe force microscopy (KPFM) measurements provide the information on the aspect ratio and confirms the presence of native oxide layer near the apexes of the facets, respectively. The inhomogeneous oxidation leads to an increase in the local work function at the apexes of the facets, restricting the electron emission from the same. Due to its room temperature fabrication, the present method is of great significance to the low-cost vacuum field emission devices fabrication.