A study on Ti-doped ZnO transparent conducting thin films fabricated by pulsed laser deposition

Ti-doped ZnO (TZO) thin films were fabricated on glass substrates by pulsed laser deposition (PLD). The TZO films had wurtzite structure with a preferred orientation along the c-axis. The effects of Ti doping concentration, substrate temperature and oxygen pressure on crystallinity, surface morphology, electrical and optical properties of the films were studied systematically. Under the optimized deposition conditions of Ti content of 1 at% in the target, substrate temperature of 200 °C and oxygen pressure of 2.5 Pa, it was found that a film would display an electrical resistivity as low as 6.34 × 10−3 Ω· cm and also had a 93.3% mean transmittance in the visible region when its thickness was adjusted to 100 nm.