کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5351384 | 1503657 | 2014 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effects of substrate nitridation on the growth of nonpolar a-plane GaN directly deposited on r-plane sapphire by metalorganic chemical vapor deposition (MOCVD) were investigated. Using nitridation, high-quality a-plane GaN with flat surface was acquired. On the contrary, if the nitridation layer was removed, the epitaxial a-plane GaN exhibited deep triangular pits and poor crystalline properties. This could be attributed to the fact that uniform-distributed AlN grains were introduced by nitridation, which might act as the nucleation layer for the following a-plane GaN growth. The effects of substrate nitridation on the evolutions of anisotropic morphologies and crystalline properties were also studied by artificially interrupting the growth at different stages. The consequences suggested the nitridation layer could contribute to surface coalescence of a-plane GaN. The reasons responsible for this phenomenon were probed by Raman spectrum, and a model was proposed to explicate the effects of nitridation on the growth of a-plane GaN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 307, 15 July 2014, Pages 525-532
Journal: Applied Surface Science - Volume 307, 15 July 2014, Pages 525-532
نویسندگان
Jun Zhang, Wu Tian, Feng Wu, Qixin Wan, Zhujuan Wang, Jin Zhang, Yulian Li, Jiangnan Dai, Yanyan Fang, Zhihao Wu, Changqing Chen, Jintong Xu, Xiangyang Li,