کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5351465 1503562 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology
چکیده انگلیسی
p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p-n modules of bismuth telluride without any doping process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 407, 15 June 2017, Pages 405-411
نویسندگان
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