کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5352117 | 1503678 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A study of GaN regrowth on the micro-faceted GaN template formed by in situ HCl etching
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This study demonstrates improvement of crystal quality of GaN film by growing it on a micro-faceted GaN template fabricated by in situ etching with an HCl/N2 etching gas mixture at 1050 °C in hydride vapor phase epitaxy (HVPE) reactor. Cathodoluminescence images of the cross-sectional structure showed that there were six sublays in the GaN film grown with in situ etching for five times. Etch pit density (EPD) and high-resolution X-ray diffraction (HR-XRD) measurements showed that the crystal quality of GaN thick film grown on micro-faceted GaN template was better than that of the as-grown GaN. A large number of columnar structures were formed on the micro-faceted GaN template at the initial stage of regrowth process, the coalescence of which played an important role in the reduction of threading dislocation density during the GaN growth. A model has been developed to explain the mechanism of forming process of the columnar structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 286, 1 December 2013, Pages 358-363
Journal: Applied Surface Science - Volume 286, 1 December 2013, Pages 358-363
نویسندگان
Weike Luo, Liang Li, Zhonghui Li, Xiaojun Xu, Jiejun Wu, Xiangshun Liu, Guoyi Zhang,