کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5352126 | 1503678 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of p-type SnO2 films via pulsed laser deposition method by using Sb as dopant
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of p-type SnO2 films via pulsed laser deposition method by using Sb as dopant Fabrication of p-type SnO2 films via pulsed laser deposition method by using Sb as dopant](/preview/png/5352126.png)
چکیده انگلیسی
p-Type transparent conducting antimony-doped tin oxide (ATO) thin films were successfully fabricated on quartz glass substrates by pulsed laser deposition using a 20 at.% Sb doped SnO2 ceramic target. The growth temperature was varied from 500 to 800 °C, after deposition, the thin films were rapidly annealed at 500 °C in air for 2 h. Several analytical tools such as X-ray diffraction (XRD), Hall measurements, four-point probe, field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer were used to explore the causes of the changes in optoelectronic properties and surface micrographs. The Sb-doped SnO2 film prepared at 700 °C possessed the lowest resistivity of 0.87 Ω cm with a Hall mobility of 0.65 cm2 vâ1 sâ1 and hole concentration of 1.01 Ã 1019 cmâ3, while the average transmittance is about 85% in the visible light region (400-800 nm). Furthermore, SnO2-based p-n homojunction was fabricated by deposition of a Sb-doped p-type SnO2 layer on a Sb-doped n-type SnO2 layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 286, 1 December 2013, Pages 417-420
Journal: Applied Surface Science - Volume 286, 1 December 2013, Pages 417-420
نویسندگان
Shihui Yu, Weifeng Zhang, Linngxia Li, Dan Xu, Helei Dong, Yuxin Jin,