کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5352339 | 1388149 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controlled growth and properties of p-type cuprous oxide films by plasma-enhanced atomic layer deposition at low temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Various copper oxide films were successfully grown by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 100 °C. X-ray diffraction analysis of the films indicated that phase-controlled deposition of CuOx phases (0 â¤Â x < 1) was possible by controlling the number of Cu deposition steps during one PEALD cycle with a fixed oxidation step. When Cu deposition was executed in one step, an amorphous CuOx (x = 0.9) film with a smooth surface (RMS roughness of 0.97 nm) was obtained. On the other hand, when the number of Cu deposition steps was increased to three, a CuOx (x = 0.6) thin film with a polycrystalline phase (grain size: 25 nm) was obtained. The as-deposited CuO0.6 film showed p-type conductivity (Hall mobility â¼37 cm2/V·s and hole concentration â¼5.4 Ã 1014 cmâ3). Moreover, p-type CuO0.6/n-type ZnO heterojunction diodes fabricated on a flexible polyethylene terephthalate substrate exhibited electrical rectification with a threshold voltage of 1.2 V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 285, Part B, 15 November 2013, Pages 373-379
Journal: Applied Surface Science - Volume 285, Part B, 15 November 2013, Pages 373-379
نویسندگان
Jung-Dae Kwon, Se-Hun Kwon, Tae-Hoon Jung, Kee-Seok Nam, Kwun-Bum Chung, Dong-Ho Kim, Jin-Seong Park,