کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5352362 1388149 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper
ترجمه فارسی عنوان
نوار غلظت جبران شده و مانع شاتکی در بورون آمورف و کاربید بور با سیلیکن و مس
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
چکیده انگلیسی
In order to understand the fundamental charge transport in a-B:H and a-BX:H (X = C, N, P) compound heterostructure devices, X-ray photoelectron spectroscopy has been utilized to determine the valence band offset and Schottky barrier present at amorphous boron compound interfaces formed with (1 0 0) Si and polished poly-crystalline Cu substrates. For interfaces formed by plasma enhanced chemical vapor deposition of a-B4-5C:H on (1 0 0) Si, relatively small valence band offsets of 0.2 ± 0.2 eV were determined. For a-B:H/Cu interfaces, a more significant Schottky barrier of 0.8 ± 0.16 eV was measured. These results are in contrast to those observed for a-BN:H and BP where more significant band discontinuities (>1-2 eV) were observed for interfaces with Si and Cu.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 285, Part B, 15 November 2013, Pages 545-551
نویسندگان
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