Surface modification of m-BiVO4 with wide band-gap semiconductor BiOCl to largely improve the visible light induced photocatalytic activity

Monoclinic BiVO4 (m-BiVO4) was modified with wide band-gap semiconductor BiOCl to construct novel p-n BiOCl/m-BiVO4 heterojunctions with simple deposition-precipitation method. The p-n junction between m-BiVO4 and BiOCl mainly led to the enhanced visible-light photoactivity of BiOCl/m-BiVO4 for degradation of MO, RhB and AOII.