کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5352622 1503679 2013 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced performance of indium zinc oxide thin film transistor by yttrium doping
ترجمه فارسی عنوان
عملکرد پیشرفته ترانزیستور فیلم نازک روی اکسید روی با استفاده از دوپینگ یونی
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
چکیده انگلیسی
The Y3+-doped indium zinc oxide thin film transistor devices were fabricated by the sol-gel spin-coating technique. The Y3+-doped indium zinc oxide thin film transistor operates in n-channel enhancement mode and exhibits a well-defined pinch-off and saturation region. Because yttrium ion possesses lower electronegativity (1.22) and standard electrode potential (−2.372 V), it can act as the carrier suppressor to reduce the carrier concentrations of indium zinc oxide (In:Zn = 1:1) thin films from 1.29 × 1020 to 3.05 × 1014 cm−3 with the increase of Y3+ doping concentrations from 0 to 12 mol%. In addition, Y3+ (12 mol%)-doped indium zinc oxide thin film has the minimal surface roughness (1.067 nm) and lowest trap states (5.14 × 1012 cm−2). Therefore, Y3+ (12 mol%)-doped indium zinc oxide thin film transistor possesses the optimum performance, and its field-effect mobility in the saturated regime, threshold voltage, on-off ratio, and S-factor are 4.76 cm2/Vs, 4.3 V, 1.32 × 106, and 2.9 V/decade, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 284, 1 November 2013, Pages 397-404
نویسندگان
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