Control of the nucleation and quality of graphene grown by low-pressure chemical vapor deposition with acetylene

- For the first time, we succeeded in the LPCVD growth of monolayer graphene using acetylene as the precursor gas.
- The growth rate is very high when acetylene is used as the source gas. Our process has exhibited the potential to shorten the growth time of CVD graphene.
- We found that the domain size, defects density, layer number and the sheet resistance of graphene can be changed by changing the acetylene flow rates.
- We found that it is also possible to form bilayer graphene using acetylene. However, further study are necessary to reduce the defects density.