On the formation of an interface amorphous layer in nanostructured ferroelectric Ba0.8Sr0.2TiO3 thin films integrated on Pt-Si and its effect on the electrical properties

► The effect of pulse-repetition frequencies (PRFs) on the properties of BST films has investigated. ► A 50 nm amorphous BST layer is observed at film-substrate interface in the films grown at 10 Hz. ► The effective dielectric constant of bulk, amorphous layers has been extracted.