Analysis of wavelength influence on a-Si crystallization processes with nanosecond laser sources

► Numerical and experimental study of single pulse laser annealing of a-Si using standard DPSS (diode pumped solid state) nanosecond laser sources. ► Experimental Raman measurements and determination of crystalline fraction. ► COMSOL numerical model of pulse laser crystallization of amorphous silicon. ► Experimental crystalline fraction and numerical results from simulation show reasonable agreement for UV-355 nm and VIS-532 nm wavelengths. ► The numerical model predicts the fluence range within which the annealing process should operate.