Fabrication and photoelectrochemical properties of ordered Si nanohole arrays

- Large-area highly ordered SiNH arrays have been fabricated by the combination of nanosphere lithography and metal assisted electroless etching.
- The diameter, length of individual nanohole, and the center-to-center distance between the neighbor nanoholes were precisely controlled through varying the conditions of nanosphere lithography and the wet etching.
- The SiNH arrays exhibited a higher photoelectrochemical hydrogen generation performance superior to that of a planar Si.
- The Pt/SiNH photocathode exhibited a high photovoltage of 0.12 V.