Surface-diffusion enhanced Ga incorporation in ZnO nanowires by oxygen vacancies

- Surface-diffusion enhanced Ga incorporation in ZnO nanowires grown on GaN substrate.
- Uniform distributions of Ga incorporation along ZnO nanowires.
- Diffusion barrier for Ga atoms decreased with the assistance of an oxygen vacancy.
- Two orders of magnitude increase in the surface diffusion coefficient caused by oxygen vacancies on ZnO nanowire sidewalls.