Microstructure and physical properties of sol gel derived SnO2:Sb thin films for optoelectronic applications

► SnO2:Sb thin films were deposited on glass substrates by sol-gel method. ► This film showed an inhibition of grain growth with increase in Sb concentration. ► These films acquire n-type conductivity due to non- stoichiometry and by the addition of Sb. ► The films exhibit a band gap widening which is important in window layer coating. ► The intense UV PL emission leads to generation of solid state lighting in LED. ► The rms roughness value of SnO2:Sb thin films are found to 1% of film thickness which makes them suitable for optoelectronic applications.