کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5353657 | 1503580 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stoichiometry dependence of the optical and minority-carrier lifetime behaviors of CdTe epitaxial films: A low-temperature and time-resolved photoluminescence study
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Cadmium telluride (CdTe) epitaxial films (EFs) were grown on near-lattice-matched Cd0.96Zn0.04Te (CZT) substrates by molecular beam epitaxy at different ambients to achieve Cd-rich samples with extra Cd molecular flux or Te-rich samples with extra Te molecular flux. The evolution of epitaxial growth was in situ monitored by reflection high-energy electron diffraction (RHEED). A two-dimensional growth mode was indicated by the streaky RHEED patterns. Crystal structures of the CdTe EFs were characterised by X-ray diffraction (XRD). XRD data suggested that the crystal quality of the CdTe EFs was improved by controlling the Cd and Te flux ratio. Low-temperature photoluminescence (PL) spectra were carried out in these CdTe EFs. The typical characteristic peak at â¼1.552Â eV denoted as the bound-to-free transition was only found in CdTe samples grown under an extra Cd flux, and Cd vacancy-related defects were absent in the Cd-rich EFs, confirming the Cd-rich or Te-rich states of the epitaxial CdTe films. Finally, minority-carrier lifetime was prolonged in Cd-rich CdTe EFs as supported by time-resolved photoluminescence (TRPL) measurement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 387, 30 November 2016, Pages 477-482
Journal: Applied Surface Science - Volume 387, 30 November 2016, Pages 477-482
نویسندگان
Kai Tang, Xuanting Zhu, Liangqing Zhu, Wei Bai, Jiawei Bai, Wenxia Dong, Jing Yang, Yuanyuan Zhang, Ye Chen, Xiaodong Tang, Junhao Chu,