Investigations on opto-electronical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films annealed at different temperatures

▸ ZAO films were prepared by DC reactive magnetron sputtering method by two individual high purity metallic targets of Zn and Al. ▸ Sputtering deposition conditions were optimized to exhibit a good surface roughness for light scattering and low resistivities. ▸ A low resistivity of 2.18 × 10−4 Ω cm and mobility of 46 cm2 V−1 s−1 obtained for ZAO film annealed at 400 °C.