Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0Â 0Â 1) substrates

► High quality GaSb layers have been grown on GaAs (0 0 1) substrates. ► The influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers has been investigated. ► It has been found that the Sb-rich GaAs substrate surface preparation can promote the growth of high-quality GaSb material. ► The p-type nature of the unintentionally doped GaSb has been studied and the main native acceptor in the GaSb is the Ga antisite (GaSb) defect.