Growth and analysis of GaN nanowire on PZnO by different-gas flow

► This research introduces an easy and safe method to grow high quality GaN NWs, as without using NH3 gas. Using just Ar gas, makes the experiment more easier and safer which have never been done before. The obtained results are in agreement with experimental and other published data and also a cheap method to grow GaN NWs, but we achieved a good result as well. This is a new growth process to decrease the cost, complexity of growth of GaN NWs. ► GaN NWs are prepared by Thermal Evaporation method, which is believed to have never been done before using these variable gas flows. ► Instead of being easy, this is a controllable method to synthesize highly crystalline GaN NWs by thermal evaporation; by changing the flow of gas, amount of powder, and the duration of growth.