Improving the ALD-grown Y2O3/Ge interface quality by surface and annealing treatments

The Pt-assisted PDA ensures even for BHF pre-treated samples very low values for the interface trap density Dit of 1.55 × 1011 eV−1 cm−2 and low leakage current densities J of <7 × 10−9 A/cm2 outperforming conventional PDA treatments. The interfacial formation of GeO2 and yttrium germanate after PDA is proven by using X-ray Photoelectron Spectroscopy measurements.