Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate

Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 390, 30 December 2016, Pages 260-265

Kai Yan, Wenqing Yao, Yuanyuan Zhao, Liping Yang, Jiangli Cao, Yongfa Zhu,