The influence of growth temperatures on the characteristics of GaN nanowires

► Synthesis of GaN nanowires at various growth temperatures, i.e. 750 °C, 850 °C, 900 °C, 950 °C, and 1000 °C. ► Study the effect of growth temperatures on the morphological, structural and optical characteristics of GaN nanowires. ► Study the presence of phonon replicas in the blue emission of photoluminescence spectra of synthesized GaN nanowires.