Finite element modelling of semi and nonpolar GaN/AlN quantum dots

► (112¯2) and (112¯0) GaN/AlN quantum dots as a candidate for light emitting devices. ► Elastic relaxation scheme shows similarity regardless the type of growth. ► Spontaneous polarisation follows polar [0 0 0 1] orientation and localisation phenomena is observed. ► Semipolar-to-nonpolar orientations of a buried QD results in reduction of the electrostatic potential value, peak-to-peak potential drop, and electric field.