کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5355665 | 1388195 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First principles study of Si etching by CHF3 plasma source
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A model of CF3 etching Si (2Â ÃÂ 4) surface has been developed based on density functional theory. We find that the reconstruction Si surface tends to be fully F-terminated. Meanwhile, C-C chain forms spontaneously on the top of the surface to resist further F-Si interacting. Over-saturated Si bonds could still be stable as well due to the strong F-Si bonding, however, it needs to overcome an energy barrier of 1.85Â eV to achieve this doubly saturated bonding. Two reaction paths are found to investigate chemical reaction of CF3 with the full F-terminated Si surface. The first path displays that all fully saturated F-Si bonds could be over-saturated and thus produce F-Si-F bonds with an energy barrier of â¼1.85Â eV. For this path, there is no product of SiF4; the second path indicates a formation of SiF4 with a much lower surface energy than the first path. The formation of SiF4 shows the possible etching mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 21, 15 August 2011, Pages 8767-8771
Journal: Applied Surface Science - Volume 257, Issue 21, 15 August 2011, Pages 8767-8771
نویسندگان
Weichao Wang, Pil-Ryung Cha, Sang ho Lee, Gyoodong Kim, Moon J. Kim, Kyeongjae Cho,