Microstructural evolution upon annealing in Ar-implanted Si

► Microstructural evolution upon annealing in Ar-implanted Si was studied. ► Before and after annealing up to 600 °C, an amorphous layer is formed but Ar bubbles are not observed in the damage layer. ► After annealing at 800 °C, three buried layers of Ar bubbles are found. ► After annealing at 1100 °C, exfoliation occurs on the surface and microtwin lamellas form in the damage layer. ► A strong recrystallization occurs at 600 to 800 °C annealing.