Optimum packing density and crystal structure of tin-doped indium oxide thin films for high-temperature annealing processes

► We studied the electrical properties and microstructure of annealed ITO thin films. ► The ITO thin films were deposited by sputtering and annealed after deposition. ► The ITO thin films with high packing density had low-resistivity after annealing. ► The low-resistive ITO thin film came from high Hall mobility. ►The carrier electrons of the films with high packing density can conduct well.