کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5356014 | 1388199 | 2011 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dielectric and relaxation properties of thermally evaporated nanostructured bismuth sulfide thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
⺠Understanding the electrical properties of semiconducting thin films is essential in device fabrication. In this study, we employed dielectric and relaxation analysis of nanocrystalline bismuth sulphide thin films. ⺠The information about the conduction of free charges under the application of an external electric field was explored using Al/BiSnc/Al structures. ⺠The inter-relationship between optical band gap energy and conduction properties of BiS thin films was explored. ⺠AC conductivity showed that the correlated barrier hopping model is the appropriate mechanism for the electron transport of BiS films. ⺠The results discussed in this report with necessary basic theoretical models were highly informative for understand the electrical properties of semiconducting thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 16, 1 June 2011, Pages 7245-7253
Journal: Applied Surface Science - Volume 257, Issue 16, 1 June 2011, Pages 7245-7253
نویسندگان
K. Mageshwari, R. Sathyamoorthy, P. Sudhagar, Yong Soo Kang,