Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

► Si1−xGex/Si pseudomorphic layers were synthesized by pulsed laser induced epitaxy. ► We performed strain and concentration measurements at the nanometer scale. ► Ge profiles are graded from the interface to the surface due segregation effects. ► The Ge profile is largely influenced by the temporal characteristics of the laser. ► A double peak laser pulse induces a two-stage solidification process.