Optical and electrical properties of laser doped Si:B in the alloy range

► Optically controlled GILD laser doping process reaches 3% B in Si by 0.03% steps. ► GILD made B-doped Si pseudomorphic layers at up to 3% B/Si by controlled 0.03% steps. ► 4-Point probe, XRD and FTIR reflectance show coherent results on GILD-doped Si. ► Drude model and FTIR reflectance give B density in Si:B layers up to 6 × 1020 cm−3.