Development of an industrial tool to make passivation layers for UV sensors improvement

► We have reached a sheet resistance lower than 500 Ω/sq for a junction depth of 29 nm and an abruptness of 3 nm/dec. ► Electrical measurements on diodes have revealed a significant leakage current of around 10−5 A/cm2, revealing the presence of defects inside the junction. ► Light Beam Induced Current (LBIC) characterization has shown that the defects are localized at the edge of the laser beam.