Construction of ZnSe-ZnO axial p-n junctions via regioselective oxidation process and their photo-detection applications

- Single ZnSe-ZnO nanowire axial p-n junction is fabricated by regioselectively oxidizing p-type ZnSe NW in air.
- The axial p-n junction presents pronounced rectifying behavior.
- A high performance UV light photodetector was constructed based on the axial p-n junction.