193Â nm Excimer laser processing of Si/Ge/Si(100) micropatterns

- Crystalline SiGe circular microstructures were grown by laser assisted techniques.
- Laser annealing enhances the microstructures aspect ratio.
- Ultrafast melting/solidification cycles avoid the spreading of the whole Ge film.
- Segregation provokes that the free edge of the microstructure is covered by Ge.