Annealing induced changes in the structure, optical and electrical properties of GeTiO2 nanostructured films

- Nanostructured GeTiO2 films were prepared by sputtering and annealing at 400-700 °C.
- The annealing temperature influences the structure, optical transmittance and electrical conductivity of films.
- (TiGe)O2 rutile structure with variable lattice constant was evidenced, in which Ti and Ge atoms are in the same lattice.
- A surface layer of big tetragonal GeO2 nanocrystals is formed in the 700 °C annealed films.
- With the increase of annealing temperature, the transparency window broadens and electrical conductivity increases.