IR study of fundamental chemical reactions in atomic layer deposition of HfO2 with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor

► Fundamental reactions of HfO2 ALD with TEMAH and ozone on Si (1 0 0) surfaces at room temperature were studied. ► TEMAH is possible to adsorb at OH sites on water adsorbed Si surfaces at room temperature. ► The ozone irradiation on the TEMAH adsorbed Si surface at room temperature is effective in removing hydroaminocarbon adsorbates. ► A water vapor treatment at around 160 °C is effective in restoring the adsorption sites. ► HfO2 ALD was achieved with a growth temperature of 160 °C.