Influences of CuO phase on electrical and optical performance of Cu2O films prepared by middle frequency magnetron sputtering

- Cu2O films with the mobility of 43 cm2 V−1 s−1 have been prepared by magnetron sputtering and post-annealing.
- The trace phase of CuO could appear at certain conditions.
- CuO phase decreases the film mobility.
- CuO phase changes the surface morphology of the films.

In the work, Cu2O films were prepared by middle frequency (mf) magnetron sputtering and subsequent anneals. CuO phase has been detected in a few Cu2O samples and its influences have been examined. The results show that the CuO phase can lead to a decrease of Hall mobility and change the surface morphology of the Cu2O films. The highest hall mobility of 43 cm2 V−1 s−1 with the optical band gaps of about 2.5 eV has been achieved in the Cu2O films where CuO is absent, which demonstrates the potential to fabricate high field-effected mobility Cu2O-based devices through this method.