کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358069 | 1388227 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties](/preview/png/5358069.png)
چکیده انگلیسی
⺠The novel two-dimensional (2-D) Ga-doped In2O3 nanoleaves are synthesized by a simple one-step carbonthermal evaporation method using Cu-Sn alloy as the substrates. ⺠The nanoleaves protrude outward from the Cu-Sn alloy substrate and are tightly connected to the substrate surface, which would result in a good physical and electrical contact for practical application. ⺠The room-temperature photoluminescence (PL) measurement of this nanoscaled Ga-doped In2O3 transparent conducting oxide (TCO) detected 2 blue peaks located at 432 nm and 481 nm, respectively, which can be used by Ru-based dye and indicates potential application in dye-sensitized solar cells (DSSCs).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 258, Issue 2, 1 November 2011, Pages 923-927
Journal: Applied Surface Science - Volume 258, Issue 2, 1 November 2011, Pages 923-927
نویسندگان
Lizhu Liu, Yiqing Chen, Linliang Guo, Taibo Guo, Yunqing Zhu, Yong Su, Chong Jia, Meiqin Wei, Yinfen Cheng,