Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties

► The novel two-dimensional (2-D) Ga-doped In2O3 nanoleaves are synthesized by a simple one-step carbonthermal evaporation method using Cu-Sn alloy as the substrates. ► The nanoleaves protrude outward from the Cu-Sn alloy substrate and are tightly connected to the substrate surface, which would result in a good physical and electrical contact for practical application. ► The room-temperature photoluminescence (PL) measurement of this nanoscaled Ga-doped In2O3 transparent conducting oxide (TCO) detected 2 blue peaks located at 432 nm and 481 nm, respectively, which can be used by Ru-based dye and indicates potential application in dye-sensitized solar cells (DSSCs).