کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358204 | 1388229 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Band alignments at SrZrO3/Ge(0Â 0Â 1) interface: Thermal annealing effects
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Band alignments at SrZrO3/Ge(0Â 0Â 1) interface: Thermal annealing effects Band alignments at SrZrO3/Ge(0Â 0Â 1) interface: Thermal annealing effects](/preview/png/5358204.png)
چکیده انگلیسی
High-κ dielectrics SrZrO3 were prepared on Ge(0 0 1) substrate using pulse laser deposition, and band alignments and thermal annealing effects were studied with high resolution X-ray photoemission spectroscopy. Valence and conduction band offsets at this interface were measured to be 3.26 eV and 1.77 eV, respectively. Interfacial Ge oxide layers were found at the interface. After annealing at 600 °C, the interfacial Ge oxide layers were eliminated, and the valence band offset increased to 3.50 eV, but the amorphous SrZrO3 became polycrystalline in the meantime.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 15, 15 May 2010, Pages 4850-4853
Journal: Applied Surface Science - Volume 256, Issue 15, 15 May 2010, Pages 4850-4853
نویسندگان
M. Yang, W.S. Deng, Q. Chen, Y.P. Feng, L.M. Wong, J.W. Chai, J.S. Pan, S.J. Wang, C.M. Ng,