کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5358328 1503650 2014 29 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of nitrogen incorporation in DLC films deposited by ECR Microwave Plasma CVD
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
The effect of nitrogen incorporation in DLC films deposited by ECR Microwave Plasma CVD
چکیده انگلیسی
Diamond like carbon (DLC) and nitrogenated diamond like carbon (DLC:N) films have been deposited by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-MP CVD) on Si (1 1 0), steel and glass substrates, using CH4 and N2 as plasma source. The effect of nitrogen doping on the optical, electrical, structural and mechanical properties of films was investigated. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy results showed that sp2 bonded carbon phases increased while the sp3 bonded carbon phases decreased by nitrogen doping. Microhardness measurements showed a decrease in hardness (from 75 to 69 GPa) according to nitrogen incorporation. Average transmittance of all the films was over 90% and band gap energy (Eg) of the films decreased due to increasing nitrogen flow rate. The film morphology was studied using the atomic force microscopy (AFM). Electrical properties were characterized by Hall measurement. Undoped DLC was p-type with a conductivity of 9.81 × 10−6 (Ω cm)−1. DLC films became n-type by nitrogen doping. The best conductivity value for the nitrogen doped DLC films was found 2.77 × 10−5 (Ω cm)−1. PL spectra of DLC and DLC:N films showed three peaks at 405 nm (3.06 eV), 533 nm (2.32 eV) and 671 nm (1.84 eV).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 314, 30 September 2014, Pages 46-51
نویسندگان
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