Polymer/porous GaN bulk heterojunction and its optoelectronic property

- Porous GaN was prepared by ultraviolet-assisted electrochemical etching.
- Bulk heterojunction of P3HT and PGaN was fabricated by a solution process.
- The excitonic emission and recombination were quenched at P3HT/PGaN interface.
- Prototype devices of P3HT/PGaN heterojunction showed obvious photovoltaic response.