The fabrication of 3-D nanostructures by a low- voltage EBL

▶ In the low-voltage EBL, the exposure depth and width approach a saturation value. ▶ The exposed patterns are strongly affected by the aperture size and baking temperature in the low voltage EBL. ▶ The depth in the superposed-dose area is 10-20% greater than that in the single-dosed area at 1 kV. ▶ Using these characteristics of low-voltage EBL, we fabricated stepped 3-D nanostructures, V-groove patterns, and 3-D structures with depth variations of only a few nanometers.