Influence of MgO and ZrO2 buffer layers on dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel processing

▶ A modified sol-gel process was used to prepare BZT thin films. ▶ Orientation of BZT films can be tailored by using MgO and ZrO2 buffer layers. ▶ High FOM and low leakage current density were achieved in BZT films with buffer layers.