Properties of a-Si:H films deposited by RF magnetron sputtering at 95 °C

▶ Study of optoelectronical properties of RF sputtered (at 95 °C) a-Si:H films. ▶ Strong correlation between H content, dangling bonds and optoelectronic properties. ▶ Enhanced disorder of the films introduced by large number of inactive impurities. ▶ Existence of SiH and SiH2 bonds - high values of [SiHx] - low doping efficiency. ▶ n-i-p solar cells fabricated on polyimide substrates with an efficiency of 1.54%.