Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes

▶ GaN surface is treated by oxygen plasma in an ICP etching system. ▶ GaN-based Schottky barrier diodes are then fabricated. ▶ The treated diodes exhibit reduced leakage current in low reverse bias range. ▶ The diodes have larger sub-bandgap photoresponse due to newly-generated surface defects.