In situ growth of Ge-rich poly-SiGe:H thin films on glass by RF magnetron sputtering for photovoltaic applications

▶ The Si fraction influences various properties of the SiGe films. ▶ The decrease of Si fraction results in an increase of RMS roughness. ▶ The decrease of Si fraction results in an increase of grain size. ▶ The decrease of Si fraction narrows the band gap. ▶ The decreasing Si fraction leads to a dramatic decrease of the resistivity.