کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358966 | 1503675 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Morphology and crystalline phase characteristics of α-GST films irradiated by a picosecond laser
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Morphology and crystalline phase characteristics of α-GST films irradiated by a picosecond laser Morphology and crystalline phase characteristics of α-GST films irradiated by a picosecond laser](/preview/png/5358966.png)
چکیده انگلیسی
The morphology and crystalline phase characteristics of amorphous Ge2Sb2Te5 films irradiated by a picosecond laser were investigated by 3D surface profiler, atomic force microscopy (AFM) and transmission electron microscopy (TEM) integrated with selected area electron diffraction (SAED). The laser irradiated spot was divided into strong ablation area, gentle ablation area, melting area and irradiation area. By theoretical calculation, the ablation and melting thresholds were determined to be 173.05Â mJÂ cmâ2 and 99.19Â mJÂ cmâ2 respectively. Meantime, the local fine morphologies of the ablation and melting areas were shown and analyzed. We also studied the irradiation area which was made up by the non-phase-change area and phase-change area. In the phase-change area, crystalline phase was determined to be face-centered cubic structure and crystalline phase characteristics for films with different thicknesses were discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 289, 15 January 2014, Pages 160-166
Journal: Applied Surface Science - Volume 289, 15 January 2014, Pages 160-166
نویسندگان
J.J. Zhao, F.R. Liu, X.X. Han, N. Bai, Y.H. Wan, X. Lin, F. Liu,