کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359070 | 1503633 | 2015 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Catalyst free growth of high density uniform InN nanocolumns on p-GaAs(0Â 0Â 1) surface by PA-MBE and their in situ XPS analysis
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Catalyst free growth of high density uniform InN nanocolumns on p-GaAs(0Â 0Â 1) surface by PA-MBE and their in situ XPS analysis Catalyst free growth of high density uniform InN nanocolumns on p-GaAs(0Â 0Â 1) surface by PA-MBE and their in situ XPS analysis](/preview/png/5359070.png)
چکیده انگلیسی
Through Indium beam irradiation toward the substrate before growing, high density uniform InN nanocolumns were obtained on p-GaAs(0Â 0Â 1) substrate and their possible one dimensional (1D) growth mechanism was analyzed. Rocking curves of all samples showed that Indium beam irradiation method had improved the crystal quality largely, which might be an effective way to release the strain between hexagonal InN(0Â 0Â 0Â 1) and cubic GaAs(0Â 0Â 1) with large lattice mismatch. Through quantitative analysis of XPS spectra gotten by in situ measurement, it was found that the InN stoichiometric ratio of all three samples were close to 1:1, which revealed that there was no residual metal at the tip of our nanocolumns. No catalyst or residual metal left could keep its electronic and optical property intact. All three samples showed strong photoluminescence at room temperature. To effectively release the strain and get well surface and interface are important for heterojunction optoelectronic device based on InN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 331, 15 March 2015, Pages 248-253
Journal: Applied Surface Science - Volume 331, 15 March 2015, Pages 248-253
نویسندگان
Qiang Jing, Hang Yang, Wancheng Li, Guoguang Wu, Yuantao Zhang, Fubin Gao, Yang Zhao, Guotong Du,