Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy

We investigate the morphological evolution of selective area epitaxy (SAE) GaN microfacets structures on crossover stripe patterns as a function of temperature, and the emission properties of semipolar InGaN/GaN multiple quantum wells (MQWs) grown on these microstructures with semipolar facets are also studied. The shapes of inner rings gradually change from nearly rectangular to hexagonal when the GaN growth temperature elevates, as a result of growth rates and surface stability varies with elevated temperatures. Three types of semipolar facets ({1 1 −2 2}, {2 1 −3 3} and {1 −1 0 1} facets) can be identified on the inner rings of these structures, which are verified by the emission properties of semipolar InGaN/GaN MQWs. The emission wavelengths of MQWs on these semipolar facets are ordered as {1 −1 0 1} > {2 1 −3 3} > {1 1 −2 2}, which is attributed to variations of growth rate and indium incorporation on different planes during InGaN growth. Furthermore, the indium composition of MQWs changes with the morphological evolution.