کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359156 | 1388243 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface and interfacial structural characterization of MBE grown Si/Ge multilayers
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Surface and interfacial structural characterization of MBE grown Si/Ge multilayers Surface and interfacial structural characterization of MBE grown Si/Ge multilayers](/preview/png/5359156.png)
چکیده انگلیسی
Si/Ge multilayer structures have been grown by solid source molecular beam epitaxy (MBE) on Si (1Â 1Â 1) and (1Â 0Â 0) substrates and were characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), high-depth-resolution secondary ion mass spectroscopy (SIMS) and cross-section high-resolution transmission electron microscopy (HRTEM). A reasonably good agreement has been obtained for layer thickness, interfacial structure and diffusion between SIMS and HRTEM measurements. Epitaxial growth and crystalline nature of the individual layer have been probed using cross-sectional HRTEM and XRD measurements. Surface and interface morphological studies by AFM and HRTEM show island-like growth of both Si and Ge nanostructures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 2, 30 October 2009, Pages 547-551
Journal: Applied Surface Science - Volume 256, Issue 2, 30 October 2009, Pages 547-551
نویسندگان
Biswajit Saha, Manjula Sharma, Abhisakh Sarma, Ashutosh Rath, P.V. Satyam, Purushottam Chakraborty, Milan K. Sanyal,